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Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integr..:

Navarro, Carlos ; Duan, Meng ; Parihar, Mukta Singh...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2017.2759308. , 2017

Link: https://hal.science/hal-02006997

RT Journal
T1 <Title>Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftunigrenoble:oai:HAL:hal-02006997v1&Exemplar=1&LAN=DE
				
A1 Navarro, Carlos
A1 Duan, Meng
A1 Parihar, Mukta Singh
A1 Adamu-Lema, Fikru
A1 Coseman, Stefan
A1 Lacord, Joris
A1 Lee, Kyunghwa
A1 Sampedro, Carlos
A1 Cheng, Binjie
A1 El Dirani, Hassan
A1 Barbé, Jean-Charles
A1 Fonteneau, Pascal
A1 Kim, Seong-Il
A1 Cristoloveanu, Sorin
A1 Bawedin, Maryline
A1 Millar, Campbell
A1 Galy, Philippe
A1 Le Royer, Cyrille
A1 Karg, Siegfried
A1 Riel, Heike
A1 Wells, Paul
A1 Kim, Yong-Tae
A1 Asenov, Asen
A1 Gamiz, Francisco
PB HAL CCSD; Institute of Electrical and Electronics Engineers
YR 2017
K1 scaling
K1 low power
K1 integration
K1 silicon on insulator (SOI) and Z²-FET
K1 1T-dynamic random access memory (DRAM)
K1 capacitor less
K1 DRAM
K1 embedded
K1 fully depleted (FD)
K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
JF info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2017.2759308
LK http://dx.doi.org/https://hal.science/hal-02006997
DO https://hal.science/hal-02006997
SF ELIB - SuUB Bremen

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