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Transistors en diamant à effet de champ pour l'électronique..:

Kah, Martin ; Michez, Damien ; Rouger, Nicolas, C...
info:eu-repo/grantAgreement//101007868/EU/ The project leading to this application has received funding from the Clean Sky 2 JointUndertaking (JU) under grant agreement No 101007868. The JU receives support fromthe European Union's Horizon 2020 research and innovation programme and the CleanSky 2 JU members other than the Union./DCADE. , 2023

Link: https://hal.science/hal-04169088

RT Journal
T1 <Title>Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftunigrenoble:oai:HAL:hal-04169088v1&Exemplar=1&LAN=DE
				
A1 Kah, Martin
A1 Michez, Damien
A1 Rouger, Nicolas, C
A1 Letellier, Juliette
A1 Driche, Khaled
A1 Couret, Marine
A1 Castelan, Anne
A1 Pernot, Julien
PB HAL CCSD
YR 2023
K1 Diamant
K1 Transistor de puissance
K1 Effet de champ
K1 Matériaux ultra grand gaps
K1 JFET
K1 MOSFET
K1 [SPI]Engineering Sciences [physics]
K1 [PHYS]Physics [physics]
JF info:eu-repo/grantAgreement//101007868/EU/ The project leading to this application has received funding from the Clean Sky 2 JointUndertaking (JU) under grant agreement No 101007868. The JU receives support fromthe European Union's Horizon 2020 research and innovation programme and the CleanSky 2 JU members other than the Union./DCADE
LK http://dx.doi.org/https://hal.science/hal-04169088
DO https://hal.science/hal-04169088
SF ELIB - SuUB Bremen

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