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1 Ergebnisse
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Transistors en diamant à effet de champ pour l'électronique..:
Kah, Martin
;
Michez, Damien
;
Rouger, Nicolas, C
...
info:eu-repo/grantAgreement//101007868/EU/ The project leading to this application has received funding from the Clean Sky 2 JointUndertaking (JU) under grant agreement No 101007868. The JU receives support fromthe European Union's Horizon 2020 research and innovation programme and the CleanSky 2 JU members other than the Union./DCADE. , 2023
Link:
https://hal.science/hal-04169088
RT Journal T1
Transistors en diamant à effet de champ pour l'électronique de puissance : comparaison de grilles (JFET) et amélioration de la tenue en tension (MOSFET)
UL https://suche.suub.uni-bremen.de/peid=base-ftunigrenoble:oai:HAL:hal-04169088v1&Exemplar=1&LAN=DE A1 Kah, Martin A1 Michez, Damien A1 Rouger, Nicolas, C A1 Letellier, Juliette A1 Driche, Khaled A1 Couret, Marine A1 Castelan, Anne A1 Pernot, Julien PB HAL CCSD YR 2023 K1 Diamant K1 Transistor de puissance K1 Effet de champ K1 Matériaux ultra grand gaps K1 JFET K1 MOSFET K1 [SPI]Engineering Sciences [physics] K1 [PHYS]Physics [physics] JF info:eu-repo/grantAgreement//101007868/EU/ The project leading to this application has received funding from the Clean Sky 2 JointUndertaking (JU) under grant agreement No 101007868. The JU receives support fromthe European Union's Horizon 2020 research and innovation programme and the CleanSky 2 JU members other than the Union./DCADE LK http://dx.doi.org/https://hal.science/hal-04169088 DO https://hal.science/hal-04169088 SF ELIB - SuUB Bremen
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