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Electroréflexion et ellipsométrie spectroscopique d'hétéros..:

Alibert, C ; Fan Jia Hua ; Erman, M...
info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:019830018011070900. , 1983

Link: https://hal.science/jpa-00245135

RT Journal
T1 <Title>Electroréflexion et ellipsométrie spectroscopique d'hétérostructures InGaAsP/InP et GaAlAs/GaAs</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftunimontpellier:oai:HAL:jpa-00245135v1&Exemplar=1&LAN=DE
				
A1 Alibert, C
A1 Fan Jia Hua
A1 Erman, M
A1 Frijlink, P
A1 Jarry, P
A1 Theeten, J.B
PB HAL CCSD; Société française de physique / EDP
YR 1983
K1 aluminium compounds
K1 ellipsometry
K1 gallium arsenide
K1 III V semiconductors
K1 indium compounds
K1 semiconductor junctions
K1 InGaAsP InP
K1 electronic levels
K1 chemical compositions
K1 GaAlAs GaAs GaAs heterostructures
K1 optical techniques
K1 electroreflectance
K1 spectroscopic ellipsometry
K1 semiconductor multilayers
K1 quaternary alloy
K1 interfaces quality
K1 mechanical stresses
K1 optical transitions
K1 GaAs double quantum well
K1 GaAlAs matrix
K1 [PHYS.HIST]Physics [physics]/Physics archives
JF info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:019830018011070900
LK http://dx.doi.org/https://hal.science/jpa-00245135
DO https://hal.science/jpa-00245135
SF ELIB - SuUB Bremen

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