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Jonctions Ga0,96Al0,04Sb adaptées à la photodétection à 1,5..:
Perotin, M
;
Gouskov, L
;
Luquet, H
...
info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01987002208093500. , 1987
Link:
https://hal.science/jpa-00245635
RT Journal T1
Jonctions Ga0,96Al0,04Sb adaptées à la photodétection à 1,55 μm réalisées par épitaxie en phase liquide
UL https://suche.suub.uni-bremen.de/peid=base-ftunimontpellier:oai:HAL:jpa-00245635v1&Exemplar=1&LAN=DE A1 Perotin, M A1 Gouskov, L A1 Luquet, H A1 Jean, A A1 Silvestre, P A1 Magallon, D A1 Martinez, C A1 Bougnot, G PB HAL CCSD; Société française de physique / EDP YR 1987 K1 p n junctions K1 photodetection K1 tunnel effect K1 n junctions K1 p sup K1 aluminium compounds K1 gallium compounds K1 III V semiconductors K1 liquid phase epitaxial growth K1 p n homojunctions K1 photodetectors K1 semiconductor growth K1 semiconductor K1 photoelectrical properties K1 reverse current K1 diodes K1 effective doping level K1 external efficiency K1 diffused planar devices K1 diffusion defects K1 avalanche device K1 1.55 micron K1 Ga sub 0.96 Al sub 0.04 Sb junctions K1 liquid phase epitaxy K1 [PHYS.HIST]Physics [physics]/Physics archives JF info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01987002208093500 LK http://dx.doi.org/https://hal.science/jpa-00245635 DO https://hal.science/jpa-00245635 SF ELIB - SuUB Bremen
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