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Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Cont..:
Helal, Hicham
;
Benamara, Zineb
;
Wederni, Mouhamed Amine
...
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/EQC2018-004704-P/ES/Modernización del Servicio de Microscopía deFuerza Atómica (AFM) del IMEYMAT. , 2021
Link:
http://hdl.handle.net/10498/25830
RT Journal T1 <Title>Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftunivcadiz:oai:rodin.uca.es:10498_25830&Exemplar=1&LAN=DE A1 Helal, Hicham A1 Benamara, Zineb A1 Wederni, Mouhamed Amine A1 Mourad, Sabrine A1 Khirouni, Kamel A1 Monier, Guillaume A1 Robert-Goumet, Christine A1 Rabehi, Abdelaziz A1 Kacha, Arslane Hatem A1 Bakkali, Hicham A1 Cervera Gontard, Lionel A1 Domínguez de la Vega, Manuel PB MDPI YR 2021 K1 Conduction mechanisms K1 Schottky diode K1 GaN K1 n-GaAs K1 Nitridation K1 Barrier height K1 I-V-T JF info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/EQC2018-004704-P/ES/Modernización del Servicio de Microscopía deFuerza Atómica (AFM) del IMEYMAT LK http://hdl.handle.net/10498/25830 DO http://hdl.handle.net/10498/25830 SF ELIB - SuUB Bremen
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