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1 Ergebnisse
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High Efficiency AlN/GaN HEMTs for Q-Band Applications with ..:
Kabouche, Riad
;
Pecheux, Romain
;
Harrouche, Kathia
...
info:eu-repo/semantics/altIdentifier/doi/10.1142/S0129156419400032. , 2019
Link:
https://hal.science/hal-02356733
RT Journal T1 <Title>High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftunivclille:oai:HAL:hal-02356733v1&Exemplar=1&LAN=DE A1 Kabouche, Riad A1 Pecheux, Romain A1 Harrouche, Kathia A1 Okada, Etienne A1 Medjdoub, F A1 Derluyn, Joff A1 Degroote, Stefan A1 Germain, Marianne A1 Gucmann, Filip A1 Middleton, Callum A1 Pomeroy, James, W A1 Kuball, Martin PB HAL CCSD; World Scientific Publishing YR 2019 K1 High electron mobility transistors (HEMTs) K1 Double heterostructure field effect transistor (DHFET) K1 GaN K1 Raman thermography K1 output power density (POUT) K1 power added efficiency (PAE) K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics JF info:eu-repo/semantics/altIdentifier/doi/10.1142/S0129156419400032 LK http://dx.doi.org/https://hal.science/hal-02356733 DO https://hal.science/hal-02356733 SF ELIB - SuUB Bremen
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