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1 Ergebnisse
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Selective area growth of P-GaN by MBE for the fabrication o..:
Rouly, Daniel
;
Tasselli, Josiane
;
Austin, Patrick
...
hal-04127127. , 2023
Link:
https://laas.hal.science/hal-04127127
RT Journal T1
Selective area growth of P-GaN by MBE for the fabrication of AlGaN/GaN normally-off HEMTs ; Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off
UL https://suche.suub.uni-bremen.de/peid=base-ftunivclille:oai:HAL:hal-04127127v1&Exemplar=1&LAN=DE A1 Rouly, Daniel A1 Tasselli, Josiane A1 Austin, Patrick A1 Cordier, Yvon A1 Courville, Aimeric A1 Vaurette, Francois A1 Lecestre, Aurélie A1 Reig, Benjamin A1 Isoird, Karine A1 Morancho, Frédéric PB HAL CCSD YR 2023 K1 AlGaN/GaN HEMT K1 normally-off K1 épitaxie localisée K1 EJM K1 simulation numérique TCAD K1 P-GaN K1 [SPI]Engineering Sciences [physics] JF hal-04127127 LK http://dx.doi.org/https://laas.hal.science/hal-04127127 DO https://laas.hal.science/hal-04127127 SF ELIB - SuUB Bremen
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