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1 Ergebnisse
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High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:
Di Gioia, G
;
Frayssinet, E
;
Samnouni, M
...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3. , 2023
Link:
https://hal.science/hal-04115301
RT Journal T1 <Title>High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftunivcotedazur:oai:HAL:hal-04115301v1&Exemplar=1&LAN=DE A1 Di Gioia, G A1 Frayssinet, E A1 Samnouni, M A1 Chinni, V A1 Mondal, P A1 Treuttel, J A1 Wallart, X A1 Zegaoui, M A1 Ducournau, Guillaume A1 Roelens, Yannick A1 Cordier, Yvon A1 Zaknoune, Mohamed PB HAL CCSD; Institute of Electrical and Electronics Engineers YR 2023 K1 GaN K1 Schottky diode K1 frequency multipliers K1 THz K1 wide band gap semiconductor K1 [SPI.TRON]Engineering Sciences [physics]/Electronics JF info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3 LK http://dx.doi.org/https://hal.science/hal-04115301 DO https://hal.science/hal-04115301 SF ELIB - SuUB Bremen
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