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Analysis of the transistor efficiency of Gas Phase Zn Diffu..:
Bordallo, C
;
Martino, J. A
;
Agopian, P. G. D
...
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). , 2017
Link:
http://hdl.handle.net/11449/160098
RT Journal T1 <Title>Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftunivespir:oai:repositorio.unesp.br:11449_160098&Exemplar=1&LAN=DE A1 Bordallo, C A1 Martino, J. A A1 Agopian, P. G. D A1 Alian, A A1 Mols, Y A1 Rooyackers, R A1 Vandooren, A A1 Verhulst, A. S A1 Simoen, E A1 Claeys, C A1 Collaert, N A1 Sarafis, P A1 Nassiopoulou, A. G PB Ieee YR 2017 K1 TFET K1 Analog Parameters K1 III-V materials K1 Transistor efficiency JF 2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017) LK http://hdl.handle.net/11449/160098 DO http://hdl.handle.net/11449/160098 SF ELIB - SuUB Bremen
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