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Analysis of the transistor efficiency of gas phase Zn diffu..:
Bordallo, C
;
Martino, J. A
;
Agopian, P. G.D
...
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. , 2017
Link:
http://hdl.handle.net/11449/169989
RT Journal T1 <Title>Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftunivespir:oai:repositorio.unesp.br:11449_169989&Exemplar=1&LAN=DE A1 Bordallo, C A1 Martino, J. A A1 Agopian, P. G.D A1 Alian, A A1 Mols, Y A1 Rooyackers, R A1 Vandooren, A A1 Verhulst, A. S A1 Simoen, E A1 Claeys, C A1 Collaert, N YR 2017 K1 Analog Parameters K1 III-V materials K1 TFET K1 Transistor efficiency JF Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings LK http://hdl.handle.net/11449/169989 DO http://hdl.handle.net/11449/169989 SF ELIB - SuUB Bremen
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