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1 Ergebnisse
1
Electric Field and Strain Tuning of 2D Semiconductor van de..:
Konstantina Iordanidou (11000957)
;
Richa Mitra (14327129)
;
Naveen Shetty (14327132)
...
https://figshare.com/articles/journal_contribution/Electric_Field_and_Strain_Tuning_of_2D_Semiconductor_van_der_Waals_Heterostructures_for_Tunnel_Field-Effect_Transistors/21814352. , 2022
Link:
https://doi.org/10.1021/acsami.2c13151.s001
RT Journal T1
Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors
UL https://suche.suub.uni-bremen.de/peid=base-ftunivfreestate:oai:figshare.com:article_21814352&Exemplar=1&LAN=DE A1 Konstantina Iordanidou (11000957) A1 Richa Mitra (14327129) A1 Naveen Shetty (14327132) A1 Samuel Lara-Avila (1650655) A1 Saroj Dash (14327135) A1 Sergey Kubatkin (1650652) A1 Julia Wiktor (4556326) YR 2022 K1 Biophysics K1 Medicine K1 Biotechnology K1 Plant Biology K1 Space Science K1 Chemical Sciences not elsewhere classified K1 Physical Sciences not elsewhere classified K1 Information Systems not elsewhere classified K1 vertical compressive strains K1 various stacking patterns K1 various rotation angles K1 principles calculations based K1 different rotation angles K1 density functional theory K1 positive electric fields K1 negative electric fields K1 external electric fields K1 efficient electronic nanodevices K1 simulations offer insights K1 realizing tunneling transistors K1 ii band alignment K1 future electronic nanodevices K1 2 </ sub K1 electric field K1 band tunneling K1 electronic properties K1 simulations show K1 future application K1 larger band K1 conduction band K1 using first K1 tunnel field K1 system resembles K1 spontaneously flow K1 small variations K1 silicon era K1 opposite behavior K1 larger overlap K1 fundamental properties K1 fermi level K1 dimensional materials K1 dft ) K1 decreased coupling K1 conduction bands K1 attractive candidates K1 also investigated K1 also considered K1 almost aligned K1 ></ sub K1 30 ° JF https://figshare.com/articles/journal_contribution/Electric_Field_and_Strain_Tuning_of_2D_Semiconductor_van_der_Waals_Heterostructures_for_Tunnel_Field-Effect_Transistors/21814352 LK http://dx.doi.org/https://doi.org/10.1021/acsami.2c13151.s001 DO https://doi.org/10.1021/acsami.2c13151.s001 SF ELIB - SuUB Bremen
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