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Electric Field and Strain Tuning of 2D Semiconductor van de..:

Konstantina Iordanidou (11000957) ; Richa Mitra (14327129) ; Naveen Shetty (14327132)...
https://figshare.com/articles/journal_contribution/Electric_Field_and_Strain_Tuning_of_2D_Semiconductor_van_der_Waals_Heterostructures_for_Tunnel_Field-Effect_Transistors/21814352. , 2022

Link: https://doi.org/10.1021/acsami.2c13151.s001

RT Journal
T1 <Title>Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftunivfreestate:oai:figshare.com:article_21814352&Exemplar=1&LAN=DE
				
A1 Konstantina Iordanidou (11000957)
A1 Richa Mitra (14327129)
A1 Naveen Shetty (14327132)
A1 Samuel Lara-Avila (1650655)
A1 Saroj Dash (14327135)
A1 Sergey Kubatkin (1650652)
A1 Julia Wiktor (4556326)
YR 2022
K1 Biophysics
K1 Medicine
K1 Biotechnology
K1 Plant Biology
K1 Space Science
K1 Chemical Sciences not elsewhere classified
K1 Physical Sciences not elsewhere classified
K1 Information Systems not elsewhere classified
K1 vertical compressive strains
K1 various stacking patterns
K1 various rotation angles
K1 principles calculations based
K1 different rotation angles
K1 density functional theory
K1 positive electric fields
K1 negative electric fields
K1 external electric fields
K1 efficient electronic nanodevices
K1 simulations offer insights
K1 realizing tunneling transistors
K1 ii band alignment
K1 future electronic nanodevices
K1 2 </ sub
K1 electric field
K1 band tunneling
K1 electronic properties
K1 simulations show
K1 future application
K1 larger band
K1 conduction band
K1 using first
K1 tunnel field
K1 system resembles
K1 spontaneously flow
K1 small variations
K1 silicon era
K1 opposite behavior
K1 larger overlap
K1 fundamental properties
K1 fermi level
K1 dimensional materials
K1 dft )
K1 decreased coupling
K1 conduction bands
K1 attractive candidates
K1 also investigated
K1 also considered
K1 almost aligned
K1 ></ sub
K1 30 °
JF https://figshare.com/articles/journal_contribution/Electric_Field_and_Strain_Tuning_of_2D_Semiconductor_van_der_Waals_Heterostructures_for_Tunnel_Field-Effect_Transistors/21814352
LK http://dx.doi.org/https://doi.org/10.1021/acsami.2c13151.s001
DO https://doi.org/10.1021/acsami.2c13151.s001
SF ELIB - SuUB Bremen

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