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Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin G..:

Lee, Ming-Wen ; Gámiz Pérez, Francisco Jesús
Lee, M.-W.; Lin, Y.-C.; Hsu, H.-T.; Gamiz, F.; Chang, E.-Y. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications. Micromachines 2023, 14, 931. https://doi.org/10.3390/mi14050931.  , 2023
Link: https://hdl.handle.net/10481/83871