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1 Ergebnisse
1
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin G..:
Lee, Ming-Wen
;
Gámiz Pérez, Francisco Jesús
Lee, M.-W.; Lin, Y.-C.; Hsu, H.-T.; Gamiz, F.; Chang, E.-Y. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications. Micromachines 2023, 14, 931. https://doi.org/10.3390/mi14050931. , 2023
Link:
https://hdl.handle.net/10481/83871
RT Journal T1
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
UL https://suche.suub.uni-bremen.de/peid=base-ftunivgranada:oai:digibug.ugr.es:10481_83871&Exemplar=1&LAN=DE A1 Lee, Ming-Wen A1 Gámiz Pérez, Francisco Jesús PB MDPI YR 2023 K1 AlGaN/GaN HEMTs K1 Etched-fin gate structure K1 Ka band K1 Linearity K1 SiC substrate JF Lee, M.-W.; Lin, Y.-C.; Hsu, H.-T.; Gamiz, F.; Chang, E.-Y. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications. Micromachines 2023, 14, 931. https://doi.org/10.3390/mi14050931 LK http://dx.doi.org/https://hdl.handle.net/10481/83871 DO https://hdl.handle.net/10481/83871 SF ELIB - SuUB Bremen
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