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1 Ergebnisse
1
f max =800 GHz with 75 nm gate length and asymmetric gate r..:
Samnouni, M
;
Wichmann, Nicolas
;
Wallart, X
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2019.8873821. , 2019
Link:
https://hal.science/hal-03066235
RT Journal T1 <Title>f max =800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftunivlille:oai:HAL:hal-03066235v1&Exemplar=1&LAN=DE A1 Samnouni, M A1 Wichmann, Nicolas A1 Wallart, X A1 Coinon, Christophe A1 Lepilliet, Sylvie A1 Bollaert, S PB HAL CCSD; IEEE YR 2019 K1 [SPI]Engineering Sciences [physics] JF info:eu-repo/semantics/altIdentifier/doi/10.1109/IRMMW-THz.2019.8873821 LK http://dx.doi.org/https://hal.science/hal-03066235 DO https://hal.science/hal-03066235 SF ELIB - SuUB Bremen
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