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Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5..:

Yu-Chen Liu ; Bo-Cia Chen ; Chia-Chun Wei...
doi:10.1021/acsaelm.3c01856.s001. , 2024

Link: https://doi.org/10.1021/acsaelm.3c01856.s001

RT Journal
T1 <Title>Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftunivoxfordfig:oai:figshare.com:article_25274199&Exemplar=1&LAN=DE
				
A1 Yu-Chen Liu
A1 Bo-Cia Chen
A1 Chia-Chun Wei
A1 Sheng-Zhu Ho
A1 Yi-De Liou
A1 Puneet Kaur
A1 Rahul
A1 Yi-Chun Chen
A1 Jan-Chi Yang
YR 2024
K1 Biophysics
K1 Medicine
K1 Biotechnology
K1 Space Science
K1 Environmental Sciences not elsewhere classified
K1 Biological Sciences not elsewhere classified
K1 Chemical Sciences not elsewhere classified
K1 Physical Sciences not elsewhere classified
K1 ray linear dichroism
K1 intensively studied due
K1 increased leakage current
K1 conducted comprehensive analysis
K1 potential alternative material
K1 5 </ sub
K1 2 </ sub
K1 robust ferroelectricity even
K1 large structure anisotropy
K1 high dielectric constant
K1 grown hzo due
K1 epitaxial freestanding hzo
K1 thin film thickness
K1 based ferroelectric applications
K1 dielectric constant
K1 thin films
K1 potential solution
K1 directly grown
K1 based semiconductors
K1 freestanding process
K1 ferroelectric properties
K1 ferroelectric field
K1 hzo decreases
K1 varying thicknesses
K1 various thicknesses
K1 recent years
K1 previous studies
K1 polarization efficiency
K1 increasing thickness
K1 important method
K1 half compared
K1 gradual suppression
K1 generation nanoelectronics
K1 gate layers
K1 effect transistors
K1 detailed information
K1 dependent ferroelectricity
K1 cracks led
K1 complementary metal
K1 combine oxides
K1 20 nm
JF doi:10.1021/acsaelm.3c01856.s001
LK http://dx.doi.org/https://doi.org/10.1021/acsaelm.3c01856.s001
DO https://doi.org/10.1021/acsaelm.3c01856.s001
SF ELIB - SuUB Bremen

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