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1 Ergebnisse
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SiC MOSFET micro-explosion due to a single event burnout: a..:
Germanicus, Rosine Coq
;
Phulpin, Tanguy
;
Rogaume, Thomas
...
info:eu-repo/semantics/altIdentifier/doi/10.31399/asm.cp.istfa2023p0483. , 2023
Link:
https://hal.science/hal-04285320
RT Journal T1 <Title>SiC MOSFET micro-explosion due to a single event burnout: analysis at the device and die levels</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftunivpoitiers:oai:HAL:hal-04285320v1&Exemplar=1&LAN=DE A1 Germanicus, Rosine Coq A1 Phulpin, Tanguy A1 Rogaume, Thomas A1 Niskanen, Kimmo A1 Froissart, Sandrine A1 Latry, O A1 Michez, Alain A1 Lüders, Ulrike PB HAL CCSD; ASM International YR 2023 K1 [PHYS]Physics [physics] K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics JF info:eu-repo/semantics/altIdentifier/doi/10.31399/asm.cp.istfa2023p0483 LK http://dx.doi.org/https://hal.science/hal-04285320 DO https://hal.science/hal-04285320 SF ELIB - SuUB Bremen
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