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Characterization of ZrO2 thin films deposited by MOCVD for ..:
Brunet, Magali
;
Scheid, Emmanuel
;
Galicka-Fau, Karolina
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mee.2009.01.034. , 2009
Link:
https://hal.science/hal-01443057
RT Journal T1
Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials
UL https://suche.suub.uni-bremen.de/peid=base-ftutoulouse3hal:oai:HAL:hal-01443057v1&Exemplar=1&LAN=DE A1 Brunet, Magali A1 Scheid, Emmanuel A1 Galicka-Fau, Karolina A1 Andrieux, Michel A1 Legros, Corinne A1 Gallet, Isabelle A1 Herbst, Michaële A1 Schamm-Chardon, Sylvie PB HAL CCSD; Elsevier YR 2009 K1 step coverage K1 3D structures K1 MIS capacitor K1 MOCVD K1 ZrO2 K1 High-k K1 thin film K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics JF info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mee.2009.01.034 LK http://dx.doi.org/https://hal.science/hal-01443057 DO https://hal.science/hal-01443057 SF ELIB - SuUB Bremen
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