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1 Ergebnisse
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Over-voltage and cross-conduction hard switching stress on ..:
Ghizzo, L
;
Trémouilles, David
;
Richardeau, Frédéric
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2023.115172. , 2023
Link:
https://hal.science/hal-04242294
RT Journal T1 <Title>Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftutoulouse3hal:oai:HAL:hal-04242294v1&Exemplar=1&LAN=DE A1 Ghizzo, L A1 Trémouilles, David A1 Richardeau, Frédéric A1 Vinnac, S A1 Jamin, F A1 Guibaud, G PB HAL CCSD; Elsevier YR 2023 K1 GaN Power Device K1 HEMT GaN K1 Reliability K1 Overload Operation K1 Degradation Mechanisms K1 Physical Degradations K1 Power Device Aging K1 [SPI.NRJ]Engineering Sciences [physics]/Electric power K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics JF info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2023.115172 LK http://dx.doi.org/https://hal.science/hal-04242294 DO https://hal.science/hal-04242294 SF ELIB - SuUB Bremen
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