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Nanoscale Thermal Transport in Vertical Gate-All-Around Jun..:

Chhandak, Mukherjee ; Rezgui, H ; Wang, Y...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2023.3321277. , 2023

RT Journal
T1 <Title>Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftutoulouse3hal:oai:HAL:hal-04296517v1&Exemplar=1&LAN=DE
				
A1 Chhandak, Mukherjee
A1 Rezgui, H
A1 Wang, Y
A1 Deng, M
A1 Kumar, A
A1 Müller, Jonas
A1 Larrieu, G
A1 Maneux, C
PB HAL CCSD; Institute of Electrical and Electronics Engineers
YR 2023
K1 Junctionless nanowire transistors
K1 electrothermal effects
K1 thermal resistance
K1 thermal capacitance
K1 low frequency S-parameter
K1 multiphysics simulation
K1 [SPI]Engineering Sciences [physics]
K1 [INFO.INFO-ET]Computer Science [cs]/Emerging Technologies [cs.ET]
K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
K1 [SPI.TRON]Engineering Sciences [physics]/Electronics
JF info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2023.3321277
LK http://dx.doi.org/https://hal.science/hal-04296517
DO https://hal.science/hal-04296517
SF ELIB - SuUB Bremen

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