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1 Ergebnisse
1
Electrical Characterization of Gallium Nitride Drift Layers..:
Allen, Noah P
vt_gsexam:22423. , 2019
Link:
http://hdl.handle.net/10919/102924
RT Journal T1
Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes
UL https://suche.suub.uni-bremen.de/peid=base-ftvirginiatec:oai:vtechworks.lib.vt.edu:10919_102924&Exemplar=1&LAN=DE A1 Allen, Noah P PB Virginia Tech YR 2019 K1 allium nitride (GaN) K1 Schottky Diode K1 wide bandgap semiconductor K1 power electronic device K1 barrier inhomogeneity K1 IVT K1 CVT K1 DLTS K1 SSPC K1 DLOS JF vt_gsexam:22423 LK http://hdl.handle.net/10919/102924 DO http://hdl.handle.net/10919/102924 SF ELIB - SuUB Bremen
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