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Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/G..:

Nguyen, Peter D ; Clavel, Michael B ; Goley, Patrick S...
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000369884700006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1. , 2015

Link: http://hdl.handle.net/10919/108821

RT Journal
T1 <Title>Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer ; IEEE Journal of the Electron Devices Society</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftvirginiatec:oai:vtechworks.lib.vt.edu:10919_108821&Exemplar=1&LAN=DE
				
A1 Nguyen, Peter D
A1 Clavel, Michael B
A1 Goley, Patrick S
A1 Liu, Jheng-Sin
A1 Allen, Noah P
A1 Guido, Louis J
A1 Hudait, Mantu K
PB IEEE
YR 2015
K1 Engineering
K1 Electrical & Electronic
K1 Germanium (Ge)
K1 heteroepitaxy
K1 metal-oxide semiconductor (MOS) devices
K1 silicon (Si)
K1 III-V materials
K1 FIELD-EFFECT TRANSISTORS
K1 SILICON
K1 DENSITY
K1 1007 Nanotechnology
K1 0906 Electrical and Electronic Engineering
JF http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000369884700006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1
LK http://hdl.handle.net/10919/108821
DO http://hdl.handle.net/10919/108821
SF ELIB - SuUB Bremen

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