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1 Ergebnisse
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Connection between Carbon Incorporation and Growth Rate for..:
Ciarkowski, Timothy
;
Allen, Noah P
;
Carlson, Eric
...
Ciarkowski, T.; Allen, N.; Carlson, E.; McCarthy, R.; Youtsey, C.; Wang, J.; Fay, P.; Xie, J.; Guido, L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials 2019, 12, 2455.. , 2019
Link:
http://hdl.handle.net/10919/93014
RT Journal T1
Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE ; Materials
UL https://suche.suub.uni-bremen.de/peid=base-ftvirginiatec:oai:vtechworks.lib.vt.edu:10919_93014&Exemplar=1&LAN=DE A1 Ciarkowski, Timothy A1 Allen, Noah P A1 Carlson, Eric A1 McCarthy, Robert A1 Youtsey, Chris A1 Wang, Jingshan A1 Fay, Patrick A1 Xie, Jinqiao A1 Guido, Louis J PB MDPI YR 2019 K1 III-nitride semiconductors K1 GaN-on-GaN homoepitaxy K1 organometallic vapor phase epitaxy K1 metal–organic chemical vapor deposition K1 carbon incorporation K1 electronic compensation K1 materials characterization K1 secondary ion mass spectroscopy JF Ciarkowski, T.; Allen, N.; Carlson, E.; McCarthy, R.; Youtsey, C.; Wang, J.; Fay, P.; Xie, J.; Guido, L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials 2019, 12, 2455. LK http://hdl.handle.net/10919/93014 DO http://hdl.handle.net/10919/93014 SF ELIB - SuUB Bremen
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