Titel

Merkliste
1 Ergebnisse

Connection between Carbon Incorporation and Growth Rate for..:

Ciarkowski, Timothy ; Allen, Noah P ; Carlson, Eric...
Ciarkowski, T.; Allen, N.; Carlson, E.; McCarthy, R.; Youtsey, C.; Wang, J.; Fay, P.; Xie, J.; Guido, L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials 2019, 12, 2455.. , 2019

Link: http://hdl.handle.net/10919/93014

RT Journal
T1 <Title>Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE ; Materials</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftvirginiatec:oai:vtechworks.lib.vt.edu:10919_93014&Exemplar=1&LAN=DE
				
A1 Ciarkowski, Timothy
A1 Allen, Noah P
A1 Carlson, Eric
A1 McCarthy, Robert
A1 Youtsey, Chris
A1 Wang, Jingshan
A1 Fay, Patrick
A1 Xie, Jinqiao
A1 Guido, Louis J
PB MDPI
YR 2019
K1 III-nitride semiconductors
K1 GaN-on-GaN homoepitaxy
K1 organometallic vapor phase epitaxy
K1 metal–organic chemical vapor deposition
K1 carbon incorporation
K1 electronic compensation
K1 materials characterization
K1 secondary ion mass spectroscopy
JF Ciarkowski, T.; Allen, N.; Carlson, E.; McCarthy, R.; Youtsey, C.; Wang, J.; Fay, P.; Xie, J.; Guido, L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials 2019, 12, 2455.
LK http://hdl.handle.net/10919/93014
DO http://hdl.handle.net/10919/93014
SF ELIB - SuUB Bremen

Export

RefWorks (nur Desktop-Version!)
Flow (Zuerst in Flow einloggen, dann importieren)