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1 Ergebnisse
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Figures of merit that characterize silicon gate-all-around ..:
Garcia-Loureiro, Antonio
;
Seoane, Natalia
;
Fernandez, Julian G
..
doi:10.5281/zenodo.7674908. , 2023
Link:
https://zenodo.org/record/7674909
RT Journal T1
Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability
UL https://suche.suub.uni-bremen.de/peid=base-ftzenodo:oai:zenodo.org:7674909&Exemplar=1&LAN=DE A1 Garcia-Loureiro, Antonio A1 Seoane, Natalia A1 Fernandez, Julian G A1 Comesaña, Enrique A1 Pichel, Juan C YR 2023 K1 Semiconductor K1 Nanowire K1 Modelling K1 Line Edge Roughness K1 Machine Learning K1 Neural Network K1 Model regression JF doi:10.5281/zenodo.7674908 LK http://dx.doi.org/https://zenodo.org/record/7674909 DO https://zenodo.org/record/7674909 SF ELIB - SuUB Bremen
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