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1 Ergebnisse
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MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gai..:
Sandhu, Harmanpreet Kaur
;
John, John Wellington
;
Jakhar, Alka
...
Advanced Materials Interfaces. 9 (2022) 12 - p. , 2022
Link:
https://doi.org/10.1002/admi.202102200
RT Journal T1
MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_admi.202102200&Exemplar=1&LAN=DE A1 Sandhu, Harmanpreet Kaur A1 John, John Wellington A1 Jakhar, Alka A1 Sharma, Abhishek A1 Jain, Alok A1 Das, Samaresh PB Wiley YR 2022 SN 2196-7350 SN 2196-7350 JF Advanced Materials Interfaces VO 9 IS 12 LK http://dx.doi.org/https://doi.org/10.1002/admi.202102200 DO https://doi.org/10.1002/admi.202102200 SF ELIB - SuUB Bremen
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