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Growth‐Related Formation Mechanism of I3‐Type Basal Stackin..:
Vincent, Laetitia
;
Fadaly, Elham M. T.
;
Renard, Charles
...
Advanced Materials Interfaces. 9 (2022) 16 - p. , 2022
Link:
https://doi.org/10.1002/admi.202102340
RT Journal T1
Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_admi.202102340&Exemplar=1&LAN=DE A1 Vincent, Laetitia A1 Fadaly, Elham M. T. A1 Renard, Charles A1 Peeters, Wouter H. J. A1 Vettori, Marco A1 Panciera, Federico A1 Bouchier, Daniel A1 Bakkers, Erik P. A. M A1 Verheijen, Marcel A. PB Wiley YR 2022 SN 2196-7350 SN 2196-7350 JF Advanced Materials Interfaces VO 9 IS 16 LK http://dx.doi.org/https://doi.org/10.1002/admi.202102340 DO https://doi.org/10.1002/admi.202102340 SF ELIB - SuUB Bremen
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