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1 Ergebnisse
1
WSe2 N‐Type Negative Capacitance Field‐Effect Transistor wi..:
Dong, Jianguo
;
Sheng, Zhe
;
Yu, Rui
...
Advanced Electronic Materials. 8 (2021) 2 - p. , 2021
Link:
https://doi.org/10.1002/aelm.202100829
RT Journal T1
WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_aelm.202100829&Exemplar=1&LAN=DE A1 Dong, Jianguo A1 Sheng, Zhe A1 Yu, Rui A1 Hu, Wennan A1 Wang, Yue A1 Sun, Haoran A1 Zhang, David Wei A1 Zhou, Peng A1 Zhang, Zengxing PB Wiley YR 2021 SN 2199-160X SN 2199-160X JF Advanced Electronic Materials VO 8 IS 2 LK http://dx.doi.org/https://doi.org/10.1002/aelm.202100829 DO https://doi.org/10.1002/aelm.202100829 SF ELIB - SuUB Bremen
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