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The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Lay..:
Seo, Haengha
;
Yeu, In Won
;
Kwon, Dae Seon
...
Advanced Electronic Materials. 8 (2022) 7 - p. , 2022
Link:
https://doi.org/10.1002/aelm.202270030
RT Journal T1
The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022)
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_aelm.202270030&Exemplar=1&LAN=DE A1 Seo, Haengha A1 Yeu, In Won A1 Kwon, Dae Seon A1 Kim, Dong Gun A1 Lim, Junil A1 Kim, Tae Kyun A1 Paik, Heewon A1 Choi, Jung‐Hae A1 Hwang, Cheol Seong PB Wiley YR 2022 SN 2199-160X SN 2199-160X JF Advanced Electronic Materials VO 8 IS 7 LK http://dx.doi.org/https://doi.org/10.1002/aelm.202270030 DO https://doi.org/10.1002/aelm.202270030 SF ELIB - SuUB Bremen
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