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1 Ergebnisse
1
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate..:
Lee, Yong Bin
;
Kim, Beom Yong
;
Park, Hyeon Woo
...
Advanced Electronic Materials. 8 (2022) 11 - p. 2270056 , 2022
Link:
https://doi.org/10.1002/aelm.202270056
RT Journal T1
Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2Ferroelectric Film (Adv. Electron. Mater. 11/2022)
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_aelm.202270056&Exemplar=1&LAN=DE A1 Lee, Yong Bin A1 Kim, Beom Yong A1 Park, Hyeon Woo A1 Lee, Suk Hyun A1 Oh, Minsik A1 Ryoo, Seung Kyu A1 Lee, In Soo A1 Byun, Seungyong A1 Shim, Doosup A1 Lee, Jae Hoon A1 Kim, Hani A1 Kim, Kyung Do A1 Park, Min Hyuk A1 Hwang, Cheol Seong PB Wiley YR 2022 SN 2199-160X SN 2199-160X JF Advanced Electronic Materials VO 8 IS 11 SP 2270056 LK http://dx.doi.org/https://doi.org/10.1002/aelm.202270056 DO https://doi.org/10.1002/aelm.202270056 SF ELIB - SuUB Bremen
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