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1 Ergebnisse
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Impact of Nitrogen Concentration and Post‐Deposition Anneal..:
Rocha, Pedro Fernandes Paes Pinto
;
Zeghouane, Mohammed
;
Boubenia, Sarah
...
Advanced Electronic Materials. 10 (2023) 3 - p. , 2023
Link:
https://doi.org/10.1002/aelm.202300528
RT Journal T1
Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_aelm.202300528&Exemplar=1&LAN=DE A1 Rocha, Pedro Fernandes Paes Pinto A1 Zeghouane, Mohammed A1 Boubenia, Sarah A1 Bassani, Franck A1 Vauche, Laura A1 Martinez, Eugénie A1 Vandendaele, William A1 Veillerot, Marc A1 Salem, Bassem PB Wiley YR 2023 SN 2199-160X SN 2199-160X JF Advanced Electronic Materials VO 10 IS 3 LK http://dx.doi.org/https://doi.org/10.1002/aelm.202300528 DO https://doi.org/10.1002/aelm.202300528 SF ELIB - SuUB Bremen
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