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1 Ergebnisse
1
A Graphene Geometric Diode with the Highest Asymmetry Ratio..:
Wang, Heng
;
Chen, Maolin
;
Yang, Yiming
...
Advanced Electronic Materials. 10 (2023) 4 - p. , 2023
Link:
https://doi.org/10.1002/aelm.202300695
RT Journal T1
A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_aelm.202300695&Exemplar=1&LAN=DE A1 Wang, Heng A1 Chen, Maolin A1 Yang, Yiming A1 Ma, Yinchang A1 Luo, Linqu A1 Liu, Chen A1 Getmanov, Igor A1 Anthopoulos, Thomas D. A1 Zhang, Xixiang A1 Shamim, Atif PB Wiley YR 2023 SN 2199-160X SN 2199-160X JF Advanced Electronic Materials VO 10 IS 4 LK http://dx.doi.org/https://doi.org/10.1002/aelm.202300695 DO https://doi.org/10.1002/aelm.202300695 SF ELIB - SuUB Bremen
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