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A High Power InGaN‐LED on an m‐Plane GaN Substrate:
YOKOGAWA, TOSHIYA
;
OYA, MITSUAKI
;
FUJIKANE, MASAKI
Electronics and Communications in Japan. 98 (2015) 5 - p. 15-22 , 2015
Link:
https://doi.org/10.1002/ecj.11669
RT Journal T1 <Title>A High Power InGaN‐LED on an m‐Plane GaN Substrate</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_ecj.11669&Exemplar=1&LAN=DE A1 YOKOGAWA, TOSHIYA A1 OYA, MITSUAKI A1 FUJIKANE, MASAKI PB Wiley YR 2015 SN 1942-9533 SN 1942-9541 JF Electronics and Communications in Japan VO 98 IS 5 SP 15 OP 22 LK http://dx.doi.org/https://doi.org/10.1002/ecj.11669 DO https://doi.org/10.1002/ecj.11669 SF ELIB - SuUB Bremen
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