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1 Ergebnisse
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Novel L‐shaped drain dual‐gateSiGe MOSFETforhigh‐frequency,..:
Yadav, Shekhar
;
Negi, Chandra Mohan Singh
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 36 (2022) 1 - p. , 2022
Link:
https://doi.org/10.1002/jnm.3039
RT Journal T1 <Title>Novel L‐shaped drain dual‐gateSiGe MOSFETforhigh‐frequency, low power applications</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_jnm.3039&Exemplar=1&LAN=DE A1 Yadav, Shekhar A1 Negi, Chandra Mohan Singh PB Wiley YR 2022 SN 0894-3370 SN 1099-1204 JF International Journal of Numerical Modelling: Electronic Networks, Devices and Fields VO 36 IS 1 LK http://dx.doi.org/https://doi.org/10.1002/jnm.3039 DO https://doi.org/10.1002/jnm.3039 SF ELIB - SuUB Bremen
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