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Design of a stable single sided 11T static random access me..:
Sachdeva, Ashish
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 36 (2022) 4 - p. , 2022
Link:
https://doi.org/10.1002/jnm.3076
RT Journal T1 <Title>Design of a stable single sided 11T static random access memory cell with improved critical charge</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_jnm.3076&Exemplar=1&LAN=DE A1 Sachdeva, Ashish PB Wiley YR 2022 SN 0894-3370 SN 1099-1204 JF International Journal of Numerical Modelling: Electronic Networks, Devices and Fields VO 36 IS 4 LK http://dx.doi.org/https://doi.org/10.1002/jnm.3076 DO https://doi.org/10.1002/jnm.3076 SF ELIB - SuUB Bremen
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