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Analytical modeling of recessed double gate junctionless fi..:
Kumar, Sandeep
;
Chatterjee, Arun Kumar
;
Pandey, Rishikesh
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 37 (2024) 2 - p. , 2024
Link:
https://doi.org/10.1002/jnm.3209
RT Journal T1 <Title>Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_jnm.3209&Exemplar=1&LAN=DE A1 Kumar, Sandeep A1 Chatterjee, Arun Kumar A1 Pandey, Rishikesh PB Wiley YR 2024 SN 0894-3370 SN 1099-1204 JF International Journal of Numerical Modelling: Electronic Networks, Devices and Fields VO 37 IS 2 LK http://dx.doi.org/https://doi.org/10.1002/jnm.3209 DO https://doi.org/10.1002/jnm.3209 SF ELIB - SuUB Bremen
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