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The effect of Zn1−xSnxOy buffer layer thickness in 18.0% ef..:
Lindahl, J.
;
Wätjen, J. T.
;
Hultqvist, A.
...
Progress in Photovoltaics: Research and Applications. 21 (2012) 8 - p. 1588-1597 , 2012
Link:
https://doi.org/10.1002/pip.2239
RT Journal T1 <Title>The effect of Zn1−xSnxOy buffer layer thickness in 18.0% efficient Cd‐free Cu(In,Ga)Se2 solar cells</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_pip.2239&Exemplar=1&LAN=DE A1 Lindahl, J. A1 Wätjen, J. T. A1 Hultqvist, A. A1 Ericson, T. A1 Edoff, M. A1 Törndahl, T. PB Wiley YR 2012 SN 1062-7995 SN 1099-159X JF Progress in Photovoltaics: Research and Applications VO 21 IS 8 SP 1588 OP 1597 LK http://dx.doi.org/https://doi.org/10.1002/pip.2239 DO https://doi.org/10.1002/pip.2239 SF ELIB - SuUB Bremen
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