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1 Ergebnisse
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Interface analysis of ultrathin SiO2 layers between c‐Si su..:
Choi, Sungjin
;
Baek, Jimin
;
Kim, Taejun
...
Progress in Photovoltaics: Research and Applications. 29 (2020) 1 - p. 32-46 , 2020
Link:
https://doi.org/10.1002/pip.3338
RT Journal T1
Interface analysis of ultrathin SiO2 layers between c‐Si substrates and phosphorus‐doped poly‐Si by theoretical surface potential analysis using the injection‐dependent lifetime
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_pip.3338&Exemplar=1&LAN=DE A1 Choi, Sungjin A1 Baek, Jimin A1 Kim, Taejun A1 Min, Kwan Hong A1 Jeong, Myeong Sang A1 Song, Hee‐eun A1 Kang, Min Gu A1 Kim, Donghwan A1 Kang, Yoonmook A1 Lee, Hae‐Seok A1 Myoung, Jae‐Min A1 Park, Sungeun PB Wiley YR 2020 SN 1062-7995 SN 1099-159X JF Progress in Photovoltaics: Research and Applications VO 29 IS 1 SP 32 OP 46 LK http://dx.doi.org/https://doi.org/10.1002/pip.3338 DO https://doi.org/10.1002/pip.3338 SF ELIB - SuUB Bremen
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