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Post‐deposition annealing and interfacial atomic layer depo..:
Weiss, Thomas Paul
;
Minguez‐Bacho, Ignacio
;
Zuccalà, Elena
...
Progress in Photovoltaics: Research and Applications. 31 (2022) 3 - p. 203-219 , 2022
Link:
https://doi.org/10.1002/pip.3625
RT Journal T1 <Title>Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open‐circuit voltages</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_pip.3625&Exemplar=1&LAN=DE A1 Weiss, Thomas Paul A1 Minguez‐Bacho, Ignacio A1 Zuccalà, Elena A1 Melchiorre, Michele A1 Valle, Nathalie A1 El Adib, Brahime A1 Yokosawa, Tadahiro A1 Spiecker, Erdmann A1 Bachmann, Julien A1 Dale, Phillip J. A1 Siebentritt, Susanne PB Wiley YR 2022 SN 1062-7995 SN 1099-159X JF Progress in Photovoltaics: Research and Applications VO 31 IS 3 SP 203 OP 219 LK http://dx.doi.org/https://doi.org/10.1002/pip.3625 DO https://doi.org/10.1002/pip.3625 SF ELIB - SuUB Bremen
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