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A detailed study of AlN and GaN grown on silicon-on-porous ..:
Gommé, Guillaume
;
Gautier, Gael
;
Portail, Marc
...
physica status solidi (a). 214 (2016) 4 - p. 1600450 , 2016
Link:
https://doi.org/10.1002/pssa.201600450
RT Journal T1
A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_pssa.201600450&Exemplar=1&LAN=DE A1 Gommé, Guillaume A1 Gautier, Gael A1 Portail, Marc A1 Frayssinet, Eric A1 Alquier, Daniel A1 Cordier, Yvon A1 Semond, Fabrice PB Wiley YR 2016 SN 1862-6300 JF physica status solidi (a) VO 214 IS 4 SP 1600450 LK http://dx.doi.org/https://doi.org/10.1002/pssa.201600450 DO https://doi.org/10.1002/pssa.201600450 SF ELIB - SuUB Bremen
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