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1 Ergebnisse
1
Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐El..:
Sun, Chi
;
Ding, Xiaoyu
;
Wei, Xing
...
physica status solidi (a). 218 (2021) 8 - p. , 2021
Link:
https://doi.org/10.1002/pssa.202000666
RT Journal T1
Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_pssa.202000666&Exemplar=1&LAN=DE A1 Sun, Chi A1 Ding, Xiaoyu A1 Wei, Xing A1 Tang, Wenxin A1 Zhang, Xiaodong A1 Zhao, Desheng A1 Li, Shuping A1 Yu, Guohao A1 Song, Liang A1 Cai, Yong A1 Zeng, Zhongming A1 Zhang, Baoshun PB Wiley YR 2021 SN 1862-6300 SN 1862-6319 JF physica status solidi (a) VO 218 IS 8 LK http://dx.doi.org/https://doi.org/10.1002/pssa.202000666 DO https://doi.org/10.1002/pssa.202000666 SF ELIB - SuUB Bremen
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