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1 Ergebnisse
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The effect of annealing ambient on carrier recombination in..:
Ratcliff, Thomas
;
Fong, Kean Chern
;
Shalav, Avi
..
physica status solidi (RRL) - Rapid Research Letters. 8 (2014) 10 - p. 827-830 , 2014
Link:
https://doi.org/10.1002/pssr.201409295
RT Journal T1 <Title>The effect of annealing ambient on carrier recombination in boron implanted silicon</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_pssr.201409295&Exemplar=1&LAN=DE A1 Ratcliff, Thomas A1 Fong, Kean Chern A1 Shalav, Avi A1 Elliman, Robert A1 Blakers, Andrew PB Wiley YR 2014 SN 1862-6254 JF physica status solidi (RRL) - Rapid Research Letters VO 8 IS 10 SP 827 OP 830 LK http://dx.doi.org/https://doi.org/10.1002/pssr.201409295 DO https://doi.org/10.1002/pssr.201409295 SF ELIB - SuUB Bremen
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