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P‐2: The Improved Photosensitivity of Amorphous In‐Ga‐Zn‐O ..:
Chan, Po-Chun
;
Tai, Ya-Hsiang
;
Liu, Han-Wen
SID Symposium Digest of Technical Papers. 49 (2018) 1 - p. 1197-1200 , 2018
Link:
https://doi.org/10.1002/sdtp.12098
RT Journal T1 <Title>P‐2: The Improved Photosensitivity of Amorphous In‐Ga‐Zn‐O TFTs with Gap‐type Structure</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_sdtp.12098&Exemplar=1&LAN=DE A1 Chan, Po-Chun A1 Tai, Ya-Hsiang A1 Liu, Han-Wen PB Wiley YR 2018 SN 0097-966X SN 2168-0159 JF SID Symposium Digest of Technical Papers VO 49 IS 1 SP 1197 OP 1200 LK http://dx.doi.org/https://doi.org/10.1002/sdtp.12098 DO https://doi.org/10.1002/sdtp.12098 SF ELIB - SuUB Bremen
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