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24.3: Short‐Channel Indium‐Gallium‐Zinc Oxide Thin‐Film Tra..:
Lu, Lei
;
Li, Jiapeng
;
Lv, Nannan
...
SID Symposium Digest of Technical Papers. 49 (2018) S1 - p. 255-258 , 2018
Link:
https://doi.org/10.1002/sdtp.12695
RT Journal T1 <Title>24.3: Short‐Channel Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect‐Suppression</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_sdtp.12695&Exemplar=1&LAN=DE A1 Lu, Lei A1 Li, Jiapeng A1 Lv, Nannan A1 Xia, Zhihe A1 Feng, Zhuoqun A1 Wang, Sisi A1 Wong, Man A1 Kwok, Hoi Sing PB Wiley YR 2018 SN 0097-966X SN 2168-0159 JF SID Symposium Digest of Technical Papers VO 49 IS S1 SP 255 OP 258 LK http://dx.doi.org/https://doi.org/10.1002/sdtp.12695 DO https://doi.org/10.1002/sdtp.12695 SF ELIB - SuUB Bremen
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