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P‐1.14: Effects of Active Layer Thickness on Performance of..:
Shi, Jianbing
;
Li, Qi
;
Xie, Jingye
...
SID Symposium Digest of Technical Papers. 55 (2024) S1 - p. 670-672 , 2024
Link:
https://doi.org/10.1002/sdtp.17170
RT Journal T1 <Title>P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_sdtp.17170&Exemplar=1&LAN=DE A1 Shi, Jianbing A1 Li, Qi A1 Xie, Jingye A1 Xiong, Longhai A1 Sun, Chuanli A1 Dong, Junchen A1 Han, Dedong A1 Zhang, Xing PB Wiley YR 2024 SN 0097-966X SN 2168-0159 JF SID Symposium Digest of Technical Papers VO 55 IS S1 SP 670 OP 672 LK http://dx.doi.org/https://doi.org/10.1002/sdtp.17170 DO https://doi.org/10.1002/sdtp.17170 SF ELIB - SuUB Bremen
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