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P‐7.3: Numerical modeling of GaN growth by MOCVD on metal s..:
Fang, Xiubo
;
Pan, Kui
;
Xia, Tianwen
...
SID Symposium Digest of Technical Papers. 55 (2024) S1 - p. 1059-1063 , 2024
Link:
https://doi.org/10.1002/sdtp.17276
RT Journal T1 <Title>P‐7.3: Numerical modeling of GaN growth by MOCVD on metal substrate</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_sdtp.17276&Exemplar=1&LAN=DE A1 Fang, Xiubo A1 Pan, Kui A1 Xia, Tianwen A1 Chen, Qinzhong A1 Zhang, Ke A1 Hou, Qinglong A1 Wu, Yongsheng A1 Liu, Hengshan A1 Sun, Jie A1 Yan, Qun A1 Guo, Tailiang PB Wiley YR 2024 SN 0097-966X SN 2168-0159 JF SID Symposium Digest of Technical Papers VO 55 IS S1 SP 1059 OP 1063 LK http://dx.doi.org/https://doi.org/10.1002/sdtp.17276 DO https://doi.org/10.1002/sdtp.17276 SF ELIB - SuUB Bremen
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