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In situ B‐doped Si epitaxial growth at low temperatures by ..:
Kirihata, Y.
;
Nomura, T.
;
Ohmi, H.
..
Surface and Interface Analysis. 40 (2008) 6-7 - p. 984-987 , 2008
Link:
https://doi.org/10.1002/sia.2835
RT Journal T1 <Title>In situ B‐doped Si epitaxial growth at low temperatures by atmospheric‐pressure plasma CVD</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_sia.2835&Exemplar=1&LAN=DE A1 Kirihata, Y. A1 Nomura, T. A1 Ohmi, H. A1 Kakiuchi, H. A1 Yasutake, K. PB Wiley YR 2008 SN 0142-2421 SN 1096-9918 JF Surface and Interface Analysis VO 40 IS 6-7 SP 984 OP 987 LK http://dx.doi.org/https://doi.org/10.1002/sia.2835 DO https://doi.org/10.1002/sia.2835 SF ELIB - SuUB Bremen
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