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SIMS depth profiling analysis of P‐doped n‐type Si layer to..:
Kim, Tae Woon
;
Baek, Hyun Jeong
;
Jang, Jong Shik
..
Surface and Interface Analysis. 46 (2014) S1 - p. 341-343 , 2014
Link:
https://doi.org/10.1002/sia.5407
RT Journal T1
SIMS depth profiling analysis of P‐doped n‐type Si layer to develop the Si QD solar cell
UL https://suche.suub.uni-bremen.de/peid=cr-10.1002_sia.5407&Exemplar=1&LAN=DE A1 Kim, Tae Woon A1 Baek, Hyun Jeong A1 Jang, Jong Shik A1 Lee, Seung Mi A1 Kim, Kyung Joong PB Wiley YR 2014 SN 0142-2421 SN 1096-9918 JF Surface and Interface Analysis VO 46 IS S1 SP 341 OP 343 LK http://dx.doi.org/https://doi.org/10.1002/sia.5407 DO https://doi.org/10.1002/sia.5407 SF ELIB - SuUB Bremen
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