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1 Ergebnisse
1
Silicon Oxynitride Gate Dielectric for Reducing Gate Leakag..:
, In:
High Dielectric Constant Materials; Springer Series in Advanced Microelectronics
,
Tseng, H.-H.
- p. 195-220 , 2005
Link:
https://doi.org/10.1007/3-540-26462-0_7
RT T1 <cTitle>High Dielectric Constant Materials; Springer Series in Advanced Microelectronics</cTitle>: T1 <Title>Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_3-540-26462-0_7&Exemplar=1&LAN=DE A1 Tseng, H.-H. PB Springer Berlin Heidelberg YR 2005 SP 195 OP 220 LK http://dx.doi.org/https://doi.org/10.1007/3-540-26462-0_7 DO https://doi.org/10.1007/3-540-26462-0_7 SF ELIB - SuUB Bremen
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