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Performance of 4H-SiC and Wz-GaN Over InP IMPATT Devices at..:

, In: Springer Proceedings in Physics; The Physics of Semiconductor Devices,
Tripathy, P. R. ; Mukherjee, M. ; Pati, S. P. - p. 1267-1271 , 2019
Link: https://doi.org/10.1007/978-3-319-97604-4_192