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Fabrication of InP-based InGaAs ridge quantum wires utilizi..:
Fujikura, H.
;
Hasegawa, H.
Journal of Electronic Materials. 25 (1996) 5 - p. 619-625 , 1996
Link:
https://doi.org/10.1007/bf02666513
RT Journal T1 <Title>Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_bf02666513&Exemplar=1&LAN=DE A1 Fujikura, H. A1 Hasegawa, H. PB Springer Science and Business Media LLC YR 1996 SN 0361-5235 SN 1543-186X JF Journal of Electronic Materials VO 25 IS 5 SP 619 OP 625 LK http://dx.doi.org/https://doi.org/10.1007/bf02666513 DO https://doi.org/10.1007/bf02666513 SF ELIB - SuUB Bremen
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