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Elevated temperature nitrogen implants in 6H-SiC:
Gaedner, Jason
;
Rao, Mulpuri V.
;
Holland, O. W.
...
Journal of Electronic Materials. 25 (1996) 5 - p. 885-892 , 1996
Link:
https://doi.org/10.1007/bf02666654
RT Journal T1 <Title>Elevated temperature nitrogen implants in 6H-SiC</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_bf02666654&Exemplar=1&LAN=DE A1 Gaedner, Jason A1 Rao, Mulpuri V. A1 Holland, O. W. A1 Kelner, G. A1 Simons, David S. A1 Chi, Peter H. A1 Andrews, John M. A1 Kretchmer, J. A1 Ghezzo, M. PB Springer Science and Business Media LLC YR 1996 SN 0361-5235 SN 1543-186X JF Journal of Electronic Materials VO 25 IS 5 SP 885 OP 892 LK http://dx.doi.org/https://doi.org/10.1007/bf02666654 DO https://doi.org/10.1007/bf02666654 SF ELIB - SuUB Bremen
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