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1 Ergebnisse
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A study of 2DEG properties in AlGaN/GaN heterostructure usi..:
Chen, Fangsheng
;
Chen, Hong
;
Deng, Zhen
...
Applied Physics A. 118 (2014) 4 - p. 1453-1457 , 2014
Link:
https://doi.org/10.1007/s00339-014-8906-1
RT Journal T1
A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD
UL https://suche.suub.uni-bremen.de/peid=cr-10.1007_s00339-014-8906-1&Exemplar=1&LAN=DE A1 Chen, Fangsheng A1 Chen, Hong A1 Deng, Zhen A1 Lu, Taiping A1 Fang, Yutao A1 Jiang, Yang A1 Ma, Ziguang A1 He, Miao PB Springer Science and Business Media LLC YR 2014 SN 0947-8396 SN 1432-0630 JF Applied Physics A VO 118 IS 4 SP 1453 OP 1457 LK http://dx.doi.org/https://doi.org/10.1007/s00339-014-8906-1 DO https://doi.org/10.1007/s00339-014-8906-1 SF ELIB - SuUB Bremen
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